Investigation of the effect of gamma irradiation on the Electrical characteristics of EEPROMs

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عنوان دوره: اولین دوره بین المللی و بیست و هشتمین دوره ملی (1400)
Radiation damage of some electronic memories of EEPROM type was experimentally studied using 60Co gamma ray source. By selecting two commercial memory models of Atmel Company with part numbers AT24C02 & AT24C02AN, the total ionizing radiation damage caused by gamma rays of 60Co source was investigated. Radiation-sensitive electrical parameters including Standby current and Read operation current were measured. It can be concluded that due to gamma irradiation and increase in absorbed dose in both memory models, the value of these electrical parameters increases.
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