، صفحه 0-0 (1) اصل مقاله (589.06 K)

عنوان دوره: اولین دوره بین المللی و بیست و هشتمین دوره ملی (1400)

Samaneh Fazelpour؛ maryam akbari nasaji؛ ali nasiri؛ hossein sadeghi؛ Amir Chakhmachi2؛ Hamideh Daneshvar

The ions (in range of 0.1 to 1.0 MeV) radiation effects of operational amplifiers is investigated using MTPF-2 plasma focus device. In this work, High-efficiency commercial LM324 amplifiers that are used in satellites, is placed in front of the focus plasma anode. According to ion irradiation, the offset current and offset voltage and voltage gain of op-amp are investigated.The experimental results show that the ion radation causes the threshold voltage change in n-p junction of the transistors in the op-amp.

high density؛ plasma focus؛ ion beam؛ electronic devices

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