Channeling parameters of protons along planar directions of Si
، صفحه 0-0 (1)
عنوان دوره: اولین دوره بین المللی و بیست و هشتمین دوره ملی (1400)
نویسندگان
چکیده
In this work, the channeling parameters, the ratio of channeling to random stopping power, and the mean channeling distance, of protons along the {100} and {110} directions of Si were studied. The channeling parameters were deduced using the simulation of the channeling Rutherford back-scattering spectra based on the exponential dechanneling function. The best simulation parameters were set using the Levenberg- Marquardt algorithm. The RBS/C spectra were taken in energy interval 1800-2200 keV, using a Si wafer
کلیدواژه ها
Channeling Rutherford Backscattering Spectrometry؛ Proton ions؛ Channeling stopping power؛ Mean channeling distance
مراجع
<p>-1</p>