Channeling parameters of protons along planar directions of Si

، صفحه 0-0 (1)
عنوان دوره: اولین دوره بین المللی و بیست و هشتمین دوره ملی (1400)
In this work, the channeling parameters, the ratio of channeling to random stopping power, and the mean channeling distance, of protons along the {100} and {110} directions of Si were studied. The channeling parameters were deduced using the simulation of the channeling Rutherford back-scattering spectra based on the exponential dechanneling function. The best simulation parameters were set using the Levenberg- Marquardt algorithm. The RBS/C spectra were taken in energy interval 1800-2200 keV, using a Si wafer
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