، صفحه 0-0 (1) اصل مقاله (366.79 K)

عنوان دوره: اولین دوره بین المللی و بیست و هشتمین دوره ملی (1400)

baharak eslami

In this article, the sensitivity of pMOS dosimeters up to high dose without gate bias investigated. Many fixed traps created in the bulk, far away from oxide-semiconductor interface. The equation for fitting the threshold voltage components induced by FTs and by STs proposed and very good fittings obtained. It shown that five experimental irradiation points are sufficient to draw a good conclusion about the values of the fitting parameters.

MOS transistors؛ Radiation dosimeters؛ Fixed traps؛ Switching traps

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