، صفحه 0-0 (1)

عنوان دوره: اولین دوره بین المللی و بیست و هشتمین دوره ملی (1400)

This paper reports dose response of MOSFETs and fading after irradiation. MOSFETs with three different thicknesses of the gate oxide layer were used. Irradiations were performed at gate biases. Dependence of the radiation sensitivity on the gate bias during irradiation and fading at room temperature without a gate bias was found. It was shown that the dependence of the threshold voltage shift on the radiation dose is linear. The results demonstrate that these MOSFETs are suitable as sensors of gamma radiation.

MOSFET؛ Threshold voltage؛ Sensitivity؛ Fading